BD635 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

BD635

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BD635

DESCRIPTION

·DC Current Gain -

: hFE = 40(Min.)@ IC= 25mA

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 60V(Min.)

·Complement to Type BD636

APPLICATIONS

·Designed for amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

2

A

ICM

Collector Current-Peak

5

A

IBB

Base Current-Continuous

Collector Power Dissipation

@ Ta=25℃

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

0.3

A

2

W

30

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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