BD5246FVE-TR(2013) Просмотр технического описания (PDF) - ROHM Semiconductor

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производитель

BD5246FVE-TR
(Rev.:2013)

Free Delay Time Setting CMOS Voltage Detector IC Series

ROHM Semiconductor 

BD52xx series BD53xx series

Datasheet

●Electrical characteristics (Unless Otherwise Specified Ta=-40 to 105°C) - continued

Parameter

Leak Current

Symbol

Condition

Ileak VDD=VDS=10V

*1

VDD=VDET×1.1, VDET=2.3-2.6V, RL=470kΩ

CT pin Threshold Voltage

VCTH

VDD=VDET×1.1, VDET=2.7-4.2V, RL=470kΩ

VDD=VDET×1.1, VDET=4.3-5.2V, RL=470kΩ

Output Delay Resistance

CT pin Output Current

Detection Voltage

Temperature coefficient

VDD=VDET×1.1, VDET=5.3-6.0V, RL=470kΩ

RCT VDD=VDET×1.1 VCT=0.5V

*1

VCT=0.1V VDD=0.95V

*1

ICT

VCT=0.5V VDD=1.5V

VDET/∆T Ta=-40°C to 105°C

Hysteresis Voltage

∆ VDET VDD=L H L, RL=470kΩ

VDET (T) : Standard Detection Voltage (2.3V to 6.0V, 0.1V step)

RL: Pull-up resistor to be connected between VOUT and power supply.

Design Guarantee. (Outgoing inspection is not done on all products.)

*1 Guaranteed at Ta=25°C.

Min.

-

VDD

×0.30

VDD

×0.30

VDD

×0.35

VDD

×0.40

5.5

15

150

-

VDET

×0.03

Limit

Typ.

-

VDD

×0.40

VDD

×0.45

VDD

×0.50

VDD

×0.50

9

40

240

±100

VDET

×0.05

Unit

Max.

0.1

µA

VDD

×0.60

VDD

×0.60

VDD

V

×0.60

VDD

×0.60

12.5 MΩ

-

µA

-

±360 ppm/°C

VDET

V

×0.08

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TSZ22111・15・001

5/13

TSZ02201-0R7R0G300040-1-2

22.May.2013 Rev.006

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