BD500 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

BD500

Silicon PNP Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

isc Product Specification

BD500/B

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

BD500

BD500B

IC= -30mA ;IB=B 0

VCE(sat)

Collector-Emitter

Saturation Voltage

BD500 IC= -5A; IB=B -0.5A

BD500B IC= -3.5A; IB=B -0.35A

VBE(on)

Base-Emitter On Voltage

BD500

BD500B

IC= -5A; VCE= -4V

IC= -3.5A; VCE= -4V

ICBO

Collector Cutoff Current

VCB= -55V;IE= 0

VCB= -85V;IE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE

DC Current Gain

BD500

IC= -5A; VCE= -4V

BD500B IC= -3.5A; VCE= -4V

fT

Current-Gain—Bandwidth Product IC= -1.0A ; VCE= -10V

MIN TYP. MAX UNIT

-50

V

-80

-1.0

V

-1.6

V

-1.0 mA

-1.0 mA

15

90

8

MHz

isc Website：www.iscsemi.cn

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