BD500 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

BD500

Silicon PNP Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

isc Product Specification

BD500/B

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -50V(Min)

-80V(Min)

·High Power Dissipation

APPLICATIONS

·Designed for use in high power audio amplifiers utilizing

complementary or quasi complementary circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BD500

-55

VCBO

Collector-Base Voltage

V

BD500B

-85

BD500

-50

VCEO

Collector-Emitter Voltage

V

BD500B

-80

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

-10

A

75

W

150

℃

-55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance, Junction to Case

MAX UNIT

1.39 ℃/W

isc Website：www.iscsemi.cn

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