BD410 Просмотр технического описания (PDF) - Comset Semiconductors
Номер в каталоге
Компоненты Описание
производитель
BD410 Datasheet PDF : 3 Pages
| |||
SEMICONDUCTORS
BD410
NPN EPITAXILA SILICON POWER TRANSISTORS
They are silicon epitaxial planar NPN power transistors mounted in a TO-126 plastic package.
AF-amplifier for high supply voltage
They are intended for control circuit, vertical output stages in TVsets, and general purpose
applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
VCBO
VCEO
VEBO
IC
ICM
PT
tJ
ts
tL
Collector-Base Voltage
500
Collector-Emitter Voltage
325
Emitter-Base Voltage
5
Collector Current
1
Collector Peak Current
Total Power Dissipation
Junction Temperature
Ta =25°C
Tc =25°C
1.5
1.25
20
-55 to +125
Storage Temperature range
-55 to +125
Lead Temperature 1.6 mm From Case For 10 Secondes
260
Unit
V
V
V
A
A
W
°C
25/09/2012
COMSET SEMICONDUCTORS
1/3
05/11/2012
Share Link: 