BCY72 Просмотр технического описания (PDF) - Comset Semiconductors
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BCY72 Datasheet PDF : 4 Pages
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PNP BCY70 – BCY71 – BCY72
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
Ratings
ICES
Collector Cutoff
Current
ICES
Collector Cutoff
Current
IEBO
Emitter Cutoff
Current
VCE(SAT)
Collector-Emitter
saturation Voltage
VBE(SAT)
Base-Emitter
Saturation Voltage
hFE
DC Current Gain
Test Condition(s)
Min Typ Max Unit
VCB = -20 V, VBE = 0 V
VCB = -50 V
VBE = 0 V,Tj = 150 °C
VCB = -45 V
VBE = 0V,Tj = 150 °C
VCB = -25 V
VBE = 0 V,Tj = 150 °C
VBE = -5.0 V, IC = 0
IC = -10 mA, IB = -1 mA
IC = -50 mA, IB = -5 mA
IC = -10 mA, IB = -1 mA
IC = -50 mA, IB = -5 mA
BCY70 -
BCY71 -
BCY72 -
BCY70 -
BCY71 -
BCY72 -
BCY70
BCY71 -
BCY72
BCY70
BCY71 -
BCY72
BCY70
BCY71 -
BCY72
BCY70
BCY71 -0.6
BCY72
BCY70
BCY71 -
BCY78
BCY70
BCY71
IC = -0.1mA
VCE = -1 V
IC = -1 mA
VCE = -1 V
IC = -10 mA
VCE = -1 V
IC = -50 mA
VCE = -1 V
Min Max Min Max
40 - 80 -
45 - 90
50 - 100 600
15 - 15 -
- -10
- -100 nA
- -100
- -0.5
- -10 µA
- -10
- -500 nA
- -0.25
- -0.5
V
- -0.9
- -1.2
BCY72
Unit
Min Max
-
-
40 -
-
50 -
-
-
16/11/2012
COMSET SEMICONDUCTORS
2/4
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