BCY58_X Просмотр технического описания (PDF) - Philips Electronics
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Компоненты Описание
производитель
BCY58_X Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN switching transistors
Product specification
BCY58; BCY59
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
hFE
hFE
hFE
VCEsat
VBEsat
Cc
Ce
fT
F
DC current gain
IC = 2 mA; VCE = 5 V
BCY58/VII; BCY59/VII
120 170 220
BCY58/VIII; BCY59/VIII
180 250 310
BCY58/IX; BCY59/IX
250 350 460
BCY58/X; BCY59/X
380 500 630
DC current gain
BCY58/VII; BCY59/VII
IC = 10 mA; VCE = 1 V
80 250 −
BCY58/VIII; BCY59/VIII
120 300 400
BCY58/IX; BCY59/IX
160 390 630
BCY58/X; BCY59/X
240 550 1000
DC current gain
BCY58/VII; BCY59/VII
IC = 100 mA; VCE = 1 V
40 −
−
BCY58/VIII; BCY59/VIII
45 −
−
BCY58/IX; BCY59/IX
60 −
−
BCY58/X; BCY59/X
60 −
−
collector-emitter saturation voltage IC = 10 mA; IB = 0.25 mA
50 100 350 mV
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
IC = 100 mA; IB = 2.5 mA
150 250 700 mV
IC = 10 mA; IB = 0.25 mA
600 700 850 mV
IC = 100 mA; IB = 2.5 mA
750 875 1200 mV
IE = ie = 0; VCB = 10 V; f = 1 MHz −
−
5
pF
IC = ic = 0; VEB = 500 mV; f = 1 MHz −
−
15 pF
IC = 10 mA; VCE = 5 V; f = 100 MHz 150 −
−
MHz
IC = 200 µA; VCE = 5 V; RS = 2 kΩ; −
−
10 dB
f = 1 kHz; B = 200 Hz
Switching times (between 10% and 90% levels)
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = 10 mA; IBon = 1 mA;
IBoff = −1 mA
ICon = 100 mA; IBon = 10 mA;
IBoff = −10 mA
−
85 150 ns
−
35
−
ns
−
50
−
ns
−
480 800 ns
−
400 −
ns
−
80
−
ns
−
55 150 ns
−
5
−
ns
−
50
−
ns
−
450 800 ns
−
250 −
ns
−
200 −
ns
1997 Jun 17
4
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