BCY58IX Просмотр технического описания (PDF) - Philips Electronics
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BCY58IX Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN switching transistors
Product specification
BCY58; BCY59
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BCY58
BCY59
collector-emitter voltage
BCY58
BCY59
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 45 °C
Tcase ≤ 45 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
Rth j-c
thermal resistance from junction to ambient in free air
thermal resistance from junction to case
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
BCY58
ICBO
collector cut-off current
BCY59
IEBO
emitter cut-off current
hFE
DC current gain
BCY58/VII; BCY59/VII
BCY58/VIII; BCY59/VIII
BCY58/IX; BCY59/IX
BCY58/X; BCY59/X
CONDITIONS
IE = 0; VCB = 32 V
IE = 0; VCB = 32 V; Tj = 150 °C
IE = 0; VCB = 45 V
IE = 0; VCB = 45 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 10 µA; VCE = 5 V
MIN. MAX. UNIT
−
32
V
−
45
V
−
32
V
−
45
V
−
7
V
−
100
mA
−
200
mA
−
200
mA
−
340
mW
−
1
W
−65
+150
°C
−
200
°C
−65
+150
°C
VALUE
450
150
UNIT
K/W
K/W
MIN. TYP. MAX. UNIT
−
−
10 nA
−
−
10 µA
−
−
10 nA
−
−
10 µA
−
−
10 nA
−
20
−
20
95
−
40 190 −
100 300 −
1997 Jun 17
3
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