BCY58IX Просмотр технического описания (PDF) - Philips Electronics
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BCY58IX Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN switching transistors
Product specification
BCY58; BCY59
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• Switching and amplification.
DESCRIPTION
NPN switching transistor in a TO-18 metal package.
PNP complements: BCY78 and BCY79.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
handbook, halfpa1ge
2
3
3
2
MAM264
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
BCY58
BCY59
VCEO
collector-emitter voltage
BCY58
BCY59
IC
collector current (DC)
Ptot
total power dissipation
hFE
DC current gain
BCY58/VII; BCY59/VII
BCY58/VIII; BCY59/VIII
BCY58/IX; BCY59/IX
BCY58/X; BCY59/X
fT
transition frequency
toff
turn-off time
CONDITIONS
MIN. TYP. MAX. UNIT
open emitter
−
−
32 V
−
−
45 V
open base
Tamb ≤ 45 °C
Tcase ≤ 45 °C
IC = 2 mA; VCE = 5 V
−
−
32 V
−
−
45 V
−
−
100 mA
−
−
340 mW
−
−
1
W
120 170 220
180 250 310
250 350 460
380 500 630
IC = 10 mA; VCE = 5 V; f = 100 MHz
150 −
−
MHz
ICon = 10 mA; IBon = 1 mA; IBoff = −1 mA
−
480 800 ns
ICon = 100 mA; IBon = 10 mA; IBoff = −10 mA −
450 800 ns
1997 Jun 17
2
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