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BCX17R

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

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SOT23 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 4 – MARCH 2001

PARTMARKING DETAILS – BCX17

– T1

BCX17R

– T4

COMPLIMENTARY TYPES - BCX19

BCX17

E

C

B

ABSOLUTE MAXIMUM RATINGS.

SOT23

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Emitter Voltage

Collector-Emitter Voltage (IC =-10mA)

Emitter-Base Voltage

Collector Current

Peak Collector Current

Peak Emitter Current

Base Current

VCES

VCEO

VEBO

IC

ICM

IEM

IB

-50

V

-45

V

-5

V

-500

mA

-1000

mA

-1000

mA

-100

mA

Peak Base Current

IBM

-200

mA

Power Dissipation at Tamb=25°C

Ptot

330

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Cut-Off

Current

Emitter-Base Cut-Off

Current

ICBO

IEBO

-100 nA

-200 µA

-10 µA

IE =0, VCB =-20V

IE =0, VCB =-20V, Tj=150°C

IC =0, VEB =-1V

Base-Emitter Voltage

Collector-Emitter

Saturation Voltage

VBE

VCE(sat)

-1.2 V

-620 mV

IC =-500mA, VCE =-1V*

IC =-500mA, IB =-50mA*

Static Forward Current hFE

Transfer Ratio

Transition Frequency

fT

100

600

IC =-100mA, VCE =-1V

70

IC =-300mA, VCE =-1V*

40

IC =-500mA, VCE =-1V*

100

MHz IC =-10mA, VCE =-5V

f =35MHz

Output Capacitance

Cobo

8.0

pF

*Measured under pulsed conditions.

Spice parameter data is available upon request for this device

VCB =-10V, f =1MHz

TBA

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