BCW61C Просмотр технического описания (PDF) - Philips Electronics
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BCW61C Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP general purpose transistors
Product specification
BCW61 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
BCW61B
IE = 0; VCB = −32 V
IE = 0; VCB = −32 V; Tamb = 150 °C
IC = 0; VEB = −4 V
IC = −10 µA; VCE = −5 V
BCW61C
BCW61D
DC current gain
BCW61B
IC = −2 mA; VCE = −5 V
BCW61C
BCW61D
DC current gain
BCW61B
IC = −50 mA; VCE = −1 V
BCW61C
BCW61D
VCEsat
VBEsat
VBE
Cc
Ce
fT
collector-emitter saturation voltage IC = −10 mA; IB = −0.25 mA
IC = −50 mA; IB = −1.25 mA
base-emitter saturation voltage IC = −10 mA; IB = −0.25 mA
IC = −50 mA; IB = −1.25 mA
base-emitter voltage
IC = −2 mA; VCE = −5 V
IC = −10 µA; VCE = −5 V
IC = −50 mA; VCE = −1 V
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
emitter capacitance
IC = ic = 0; VEB = −0.5 V; f = 1 MHz
transition frequency
IC = −10 mA; VCE = −5 V;
f = 100 MHz; note 1
F
noise figure
IC = −200 µA; VCE = −5 V;
RS = 2 kΩ; f = 1 kHz; B = 200 Hz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MIN. TYP. MAX. UNIT
−
−
−20 nA
−
−
−20 µA
−
−
−20 nA
30 −
−
40 −
−
100 −
−
180 −
310
250 −
460
380 −
630
80
100
110
−60
−120
−600
−0.68
−600
−
−
−
−
100
−
−
−
−
−
−
−
−650
−550
−720
4.5
11
−
−
−
−
−250
−550
−850
−1.05
−750
−
−
−
−
−
mV
mV
mV
V
mV
mV
mV
pF
pF
MHz
−
2
6
dB
1999 Apr 12
3
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