BCW29 Просмотр технического описания (PDF) - KEXIN Industrial

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Компоненты Описание

производитель

BCW29

PNP Transistors

KEXIN Industrial 

SMD Type

Transistors

PNP Transistors

BCW29~BCW30 (KCW29~KCW30)

■ Electrical Characteristics Ta = 25℃

Parameter

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

DC current gain

DC current gain

Collector capacitance

Noise figure

Transition frequency

BCW29

BCW30

BCW29

BCW30

Symbol

Test Conditions

VCBO Ic= -100 μA， IE=0

VCEO Ic= -2 mA， IB=0

VEBO IE= -100μA， IC=0

ICBO

VCB= -32 V , IE=0

VCB= -32 V , IE=0,Tamb = 100℃

IEBO VEB= -5V , IC=0

IC=-10 mA, IB=- 0.5mA

VCE(sat)

IC=-50 mA, IB= -2.5mA

IC=-10 mA, IB=- 0.5mA

VBE(sat)

IC=-50 mA, IB= -2.5mA

VBE VCE= -5V, IC= -2mA

VCE= -5V, IC= -10uA

hFE

VCE= -5V, IC= -2mA

Cc VCB=-10V,IE=Ie=0,f=1MHz

NF

IC = −200 μA; VCE = −5 V;

RS = 2 kΩ;f = 1 kHz; B = 200 Hz

fT VCE= -5V, IC= -10mA,f=100MHz

Min Typ Max Unit

-32

-32

V

-5

-100 nA

-10 uA

-100 nA

-80 -300

-150

-720

mV

-810

-600

-750

90

150 300

120

260

215

500

4.5

pF

10 dB

100

MHz

■ Classification of hfe(2)

Type

BCW29

Range

120-260

Marking

C1*

BCW30

215-500

C2*

2 www.kexin.com.cn

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