BCV62A(2001) Просмотр технического описания (PDF) - Infineon Technologies

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производитель

BCV62A
(Rev.:2001)

PNP Silicon Double Transistor

Infineon Technologies 

BCV62

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics of T1

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

Collector-base breakdown voltage

IC = 10 µA, IB = 0

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

Collector cutoff current

VCB = 30 V, IE = 0

V(BR)CEO 30

-

-V

V(BR)CBO 30

-

-

V(BR)EBO 6

-

-

ICBO

-

-

15 nA

Collector cutoff current

VCB = 30 V, IE = 0 , TA = 150 °C

DC current gain 1)

IC = 0.1 mA, VCE = 5 V

DC current gain 1)

IC = 2 mA, VCE = 5 V

BCV62A

BCV62B

BCV62C

ICBO

hFE

hFE

-

-

100 -

5 µA

--

125 180 220

220 290 475

420 520 800

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

mV

-

75 300

-

250 650

Base-emitter saturation voltage 1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

Base-emitter voltage 1)

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

VBEsat

-

700

-

-

850

-

VBE(ON)

600 650 750

-

- 820

1) Pulse test: t ≤ 300µs, D = 2%

2

Jul-11-2001

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