BC856BW-AQ(2019) Просмотр технического описания (PDF) - Diotec Semiconductor Germany
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производитель
BC856BW-AQ Datasheet PDF : 2 Pages
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BC856AW ... BC859CW
Characteristics
Tj = 25°C
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 5 V, IC = 10 µA
Group A
Group B
hFE
Group C
VCE = 5 V, IC = 2 mA
Group A
Group B
hFE
Group C
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
VCEsat
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
VBEsat
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 10 mA
VBE
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 30 V, (E open)
VCE = 30 V, Tj = 125°C, (E open)
ICBO
Emitter-Base cutoff current
VEB = 5 V, (C open)
IEBO
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE =ie = 0, f = 1 MHz
CCBO
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEBO
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 µA, RG = 2 kΩ
f = 1 kHz, Δf = 200 Hz
BC856W ... BC858W
BC859W
F
Thermal resistance junction to ambient
Wärmewiderstand Sperrschicht – Umgebung
RthA
Min.
Kennwerte
Typ.
Max.
–
140
–
–
250
–
–
480
–
125
180
250
220
290
475
420
520
800
–
75 mV 300 mV
–
250 mV 650 mV
–
700 mV
–
–
850 mV
–
600 mV
–
650 mV
–
750 mV
820 mV
–
–
15 nA
–
–
5 µA
–
–
100 nA
–
100 MHz
–
–
–
4.5 pF
–
10 pF
15 pF
–
–
10 dB
–
1 dB
4 dB
< 620 K/W 2)
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1 Tested with pulses tp = 300 µs, duty cycle ≤ 2%
Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
2 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
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