BC846S Просмотр технического описания (PDF) - Diotec Semiconductor Germany

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производитель

BC846S

SMD General Purpose Dual NPN Transistors

Diotec Semiconductor Germany  

Characteristics (Tj = 25°C)

per transistor – pro Transistor

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCB = 30 V, (E open)

Emitter-Base cutoff current – Emitter-Basis-Reststrom

VEB = 5 V, (C open)

Gain-Bandwidth Product – Transitfrequenz

VCE = 5 V, IC = 10 mA, f = 100 MHz

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE =ie = 0, f = 1 MHz

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BC846S ... BC849S

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

ICBO

–

–

15 nA

IEBO

–

–

100 nA

fT

100 MHz

–

–

CCBO

–

–

4.5 pF

RthA

< 420 K/W 1)

BC856S ... BC859S

120

[%]

100

80

60

40

20

Ptot

0

0 TA 50

100

150 [°C]

Power dissipation versus ambient temperature 1)

Verlustleistung in Abh. von d. Umgebungstemp.1)

Disclaimer: See data book page 2 or website

Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet

1 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

http://www.diotec.com/

© Diotec Semiconductor AG

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