BC847(2012) Просмотр технического описания (PDF) - NXP Semiconductors.
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BC847 Datasheet PDF : 15 Pages
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NXP Semiconductors
BC847 series
45 V, 100 mA NPN general-purpose transistors
1200
hFE
1000
(1)
800
600
(2)
mgt731
1200
VBE
(mV)
1000
800
600
mgt732
(1)
(2)
400
(3)
200
400
(3)
200
0
10−1
1
10
102
103
IC (mA)
VCE = 5 V
(1) Tamb = 150 C
(2) Tamb = 25 C
(3) Tamb = 55 C
Fig 9. Group C: DC current gain as a function of
collector current; typical values
0
10−2
10−1
1
10
102
103
IC (mA)
VCE = 5 V
(1) Tamb = 55 C
(2) Tamb = 25 C
(3) Tamb = 150 C
Fig 10. Group C: Base-emitter voltage as a function of
collector current; typical values
104
VCEsat
(mV)
103
mgt733
102
(1)
(3) (2)
10
10−1
1
10
102
103
IC (mA)
IC/IB = 20
(1) Tamb = 150 C
(2) Tamb = 25 C
(3) Tamb = 55 C
Fig 11. Group C: Collector-emitter saturation voltage
as a function of collector current; typical
values
1200
VBEsat
(mV)
1000
(1)
800
(2)
600
(3)
400
mgt734
200
0
10−1
1
10
102
103
IC (mA)
IC/IB = 10
(1) Tamb = 55 C
(2) Tamb = 25 C
(3) Tamb = 150 C
Fig 12. Group C: Base-emitter saturation voltage as a
function of collector current; typical values
BC847_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 20 August 2012
© NXP B.V. 2012. All rights reserved.
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