BC846DS Просмотр технического описания (PDF) - NXP Semiconductors.
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BC846DS Datasheet PDF : 12 Pages
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NXP Semiconductors
BC846DS
65 V, 100 mA NPN/NPN general-purpose transistor
1
VBE
(V)
0.8
006aaa536
0.6
0.4
10−1
1
10
VCE = 5 V; Tamb = 25 °C
102
103
IC (mA)
Fig 5. Per transistor: Base-emitter voltage as a
function of collector current; typical values
10
VCEsat
(V)
1
006aaa535
10−1
(1)
(2)
(3)
10−2
10−1
1
10
102
103
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 7.
Per transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
1.3
VBEsat
(V)
1.1
006aaa534
0.9
(1)
0.7
(2)
(3)
0.5
0.3
0.1
10−1
1
10
102
103
IC (mA)
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 6.
Per transistor: Base-emitter saturation voltage
as a function of collector current; typical
values
103
006aaa537
fT
(MHz)
102
10
1
10
VCE = 5 V; Tamb = 25 °C
102
IC (mA)
Fig 8. Per transistor: Transition frequency as a
function of collector current; typical values
BC846DS_1
Product data sheet
Rev. 01 — 17 July 2009
© NXP B.V. 2009. All rights reserved.
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