BC846BPN Просмотр технического описания (PDF) - NXP Semiconductors.
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BC846BPN Datasheet PDF : 12 Pages
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NXP Semiconductors
BC846BS
65 V, 100 mA NPN/NPN general-purpose transistor
Table 8. Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
Ce
emitter capacitance VEB = 0.5 V; IC = ic = 0 A;
f = 1 MHz
fT
transition frequency VCE = 5 V; IC = 10 mA;
f = 100 MHz
NF
noise figure
VCE = 5 V; IC = 0.2 mA;
RS = 2 kΩ;
f = 10 Hz to 15.7 kHz
VCE = 5 V; IC = 0.2 mA;
RS = 2 kΩ; f = 1 kHz;
B = 200 Hz
Min Typ Max Unit
-
1.9 -
pF
-
11
-
pF
100 -
-
MHz
-
1.9 -
dB
-
3.1 -
dB
600
hFE
400
(1)
(2)
200
(3)
006aaa533
0.20 IB (mA) = 4.50
IC
4.05
(A)
3.60
3.15
0.16
0.12
0.08
0.04
006aaa532
2.70
2.25
1.80
1.35
0.90
0.45
0
10−2
10−1
1
10
102
103
IC (mA)
0
0
2
4
6
8
10
VCE (V)
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. Per transistor: DC current gain as a function of
collector current; typical values
Fig 4.
Tamb = 25 °C
Per transistor: Collector current as a function
of collector-emitter voltage; typical values
BC846BS_1
Product data sheet
Rev. 01 — 24 August 2009
© NXP B.V. 2009. All rights reserved.
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