BUZ76 Просмотр технического описания (PDF) - Intersil
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BUZ76 Datasheet PDF : 5 Pages
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Semiconductor
Data Sheet
BUZ76
October 1998 File Number 2264.1
3A, 400V, 1.800 Ohm, N-Channel Power
Features
MOSFET
[ /Title
(BUZ76)
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
/Subject switching regulators, switching converters, motor drivers,
(3A,
relay drivers, and drivers for high power bipolar switching
• 3A, 400V
• rDS(ON) = 1.800Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
400V, transistors requiring high speed and low gate drive power.
1.800 This type can be operated directly from integrated circuits.
Ohm, N- Formerly developmental type TA17404.
Channel
Power Ordering Information
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
MOS-
FET)
PART NUMBER
PACKAGE
BUZ76
TO-220AB
BRAND
BUZ76
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
/Author NOTE: When ordering, use the entire part number.
Symbol
()
D
/Key-
words
(Harris
G
Semi-
conduc-
S
tor, N-
Channel
Power Packaging
MOS-
FET,
JEDEC TO-220AB
TO-
220AB)
/Creator
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
()
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/UseOut-
lines
/DOC-
VIEW
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998
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