Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Номер в каталоге
Компоненты Описание
BB304C Просмотр технического описания (PDF) - Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
BB304C
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
Renesas Electronics
BB304C Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
BB304C
Noise Figure vs. Drain Current
4
V
DS
= 9 V
V
G1
= 9 V
3
V
G2S
= 6 V
R
G
= variable
f = 200 MHz
2
1
0
5 10 15 20 25 30
Drain Current I
D
(mA)
Gain Reduction vs.
Gate2 to Source Voltage
60
V
DS
= 9 V
50
V
G1
= 9 V
V
G2S
= 6 V
40
R
G
= 470 k
Ω
f = 200 MHz
30
20
10
0 1 2 34 5 6 7
Gate2 to Source Voltage V
G2S
(V)
Drain Current vs. Gate Resistance
30
25
20
15
10
5
V
DS
= 9 V
V
G1
= 9 V
0
V
G2S
= 6 V
0.1 0.2 0.5 1 2
5 10
Gate Resistance R
G
(M
Ω
)
Input Capacitance vs.
Gate2 to Source Voltage
6
5
4
3
2
V
DS
= 9 V
1
V
G1
= 9 V
R
G
= 470 k
Ω
f = 1 MHz
0
1
2
3
4
5
6
Gate2 to Source Voltage V
G2S
(V)
Rev.6.00 Aug 10, 2005 page 6 of 9
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]