BB505M Просмотр технического описания (PDF) - Renesas Electronics

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производитель

BB505M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Renesas Electronics 

BB505M

S11 Parameter vs. Frequency

.8 1

.6

.4

1.5

2

3

4

.2

5

10

0

.2 .4 .6 .8 1 1.5 2 3 4 5 10

-10

-.2

-5

-4

-3

-.4

-2

-.6

-.8 -1

-1.5

Condition: VDS = 5 V, VG1 = 5 V, VG2S = 4 V

RG = 220 kΩ, Zo = 50 Ω

50 to 1000 MHz (50 MHz Step)

S21 Parameter vs. Frequency

90°

Scale: 1 / div.

120°

60°

150°

30°

180°

0°

-150°

-30°

-120°

-60°

-90°

Condition: VDS = 5 V, VG1 = 5 V, VG2S = 4 V

RG = 220 kΩ, Zo = 50 Ω

50 to 1000 MHz (50 MHz Step)

S12 Parameter vs. Frequency

90° Scale: 0.02 / div.

120°

60°

150°

30°

180°

0°

-150°

-30°

-120°

-60°

-90°

Condition: VDS = 5 V, VG1 = 5 V, VG2S = 4 V

RG = 220 kΩ, Zo = 50 Ω

50 to 1000 MHz (50 MHz Step)

S22 Parameter vs. Frequency

.8 1

.6

1.5

2

.4

3

4

.2

5

10

0

.2 .4 .6 .8 1 1.5 2 3 4 5 10

-10

-.2

-5

-4

-.4

-.6

-.8 -1

-3

-2

-1.5

Condition: VDS = 5 V, VG1 = 5 V, VG2S = 4 V

RG = 220 kΩ, Zo = 50 Ω

50 to 1000 MHz (50 MHz Step)

Rev.1.00, Jun.14.2004, page 6 of 8

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