BB505M Просмотр технического описания (PDF) - Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
BB505M Datasheet PDF : 9 Pages
| |||
BB505M
Main Characteristics
Maximum Channel Power Dissipation Curve
400
300
200
100
Typical Output Characteristics
20
VG2S = 4 V
VG1 = VDS
15
10
5
223723000kkkΩΩΩ
0
50
100
150
200
Ambient Temperature Ta (°C)
* Value on the glass epoxy board (50mm × 40mm × 1mm)
Drain Current vs. Gate1 Voltage
20
VDS = 5 V
RG = 220 kΩ
15
4V
3V
10
2V
5
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage VG1 (V)
Drain Current vs. Gate Resistance
20
VDS = 5 V
VG1 = 5 V
15
VG2S = 4 V
10
5
0
100
200
500
1000
Gate Resistance RG (kΩ)
0
1
2
3
4
5
Drain to Source Voltage VDS (V)
Forward Transfer Admittance
vs. Gate1 Voltage
50
VDS = 5 V
VG1 = 5V
40 RG = 220 kΩ
f = 1 kHz
4V
30
3V
2V
20
10
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage VG1 (V)
Input Capacitance vs.
Gate2 to Source Voltage
4
3
2
VDS = 5 V
1 VG1 = 5 V
RG = 220 kΩ
f = 1 MHz
0
0
1
2
3
4
Gate2 to Source Voltage VG2S (V)
Rev.1.00, Jun.14.2004, page 4 of 8
Share Link: 