BB505M Просмотр технического описания (PDF) - Renesas Electronics

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BB505M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Renesas Electronics 

BB505M

Build in Biasing Circuit MOS FET IC

UHF RF Amplifier

Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.

• Low noise; NF = 1.5 dB typ. at f = 900 MHz

• High gain; PG = 24 dB typ. at f = 900 MHz

• Withstanding to ESD;

Build in ESD absorbing diode. Withstand up to 190 V at C = 200 pF, Rs = 0 conditions.

• Provide mini mold packages; MPAK-4 (SOT-143mod)

Outline

MPAK-4

REJ03G0365-0100Z

Rev.1.00

Jun.14.2004

Notes:

2

3

1

4

1. Source

2. Gate1

3. Gate2

4. Drain

1. Marking is “ES-”.

2. BB505M is individual type number of RENESAS BBFET.

Absolute Maximum Ratings

Item

Drain to source voltage

Gate1 to source voltage

Symbol

VDS

VG1S

Gate2 to source voltage

VG2S

Drain current

Channel power dissipation

ID

Pchnote3

Channel temperature

Tch

Storage temperature

Tstg

Notes: 3. Value on the glass epoxy board (50 mm × 40 mm × 1 mm ).

Ratings

6

+6

–0

+6

–0

20

300

150

–55 to +150

(Ta = 25°C)

Unit

V

V

V

mA

mW

°C

°C

Rev.1.00, Jun.14.2004, page 1 of 8

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