BB504C Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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BB504C Datasheet PDF : 11 Pages
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Drain Current vs. Gate Resistance
30
20
10
V DS = VG1 = 5 V
VG2S = 4 V
0
10 20 50 100 200 500 1000
Gate Resistance R G (k Ω )
BB504C
Input Capacitance vs.
Gate2 to Source Voltage
4
3
2
1 V DS = VG1 = 5 V
R G = 120 kΩ
f = 1 MHz
0
0
1
2
3
4
Gate2 to Source Voltage V G2S (V)
Gain Reduction vs.
Gate2 to Source Voltage
0
10
20
30
VDS = VG1 = 5 V
40 R G = 120 kΩ
f = 200MHz
50
4
3
2
1
0
Gate2 to Source Voltage V G2S (V)
Gain Reduction vs.
Gate2 to Source Voltage
0
10
20
30
V DS = VG1 = 5 V
40 R G = 120 kΩ
f = 900MHz
50
4
3
2
1
0
Gate2 to Source Voltage V G2S (V)
7
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