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Компоненты Описание
BB504C Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
BB504C
Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
Hitachi -> Renesas Electronics
BB504C Datasheet PDF : 11 Pages
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3
4
5
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8
9
10
Maximum Channel Power
Dissipation Curve
200
150
100
50
0
50
100
150
200
Ambient Temperature Ta (
°
C)
BB504C
Typical Output Characteristics
20
V
G2S
= 4 V
V
G1
= V
DS
16
12
8
180
220
k
Ω
k
Ω
4
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain Current vs. Gate1 Voltage
20
V
DS
= 5 V
R
G
= 120 k
Ω
16
4V
12
3V
2V
8
4
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V
G1
(V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
V
DS
= 5 V
R
G
= 120 k
Ω
24
f = 1 kHz
4V
3V
18
2V
12
6
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V
G1
(V)
5
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