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Компоненты Описание
BB502 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
BB502
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
BB502 Datasheet PDF : 13 Pages
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BB502C
Drain Current vs. Gate1 Voltage
20
V
DS
= 5 V
R
G
= 270 k
Ω
16
12
8
3V
4V
4
2V
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V
G1
(V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
V
DS
= 5 V
R
G
= 120 k
Ω
24
f = 1 kHz
4V
3V
18
2V
12
6
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V
G1
(V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
V
DS
= 5 V
R
G
= 180 k
Ω
4V
24
f = 1 kHz
3V
18
2V
12
6
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V
G1
(V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
V
DS
= 5 V
R
G
= 270 k
Ω
24
f = 1 kHz
4V
3V
18
12
6
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V
G1
(V)
6
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