BB501 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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BB501 Datasheet PDF : 13 Pages
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Power Gain vs. Gate Resistance
30
25
20
15
10 VDS = VG1 = 5 V
VG2S = 4 V
f = 900 MHz
5
0
10
20
50
100
Gate Resistance R G (k Ω )
BB501C
Noise Figure vs. Gate Resistance
4
3
2
VDS = VG1 = 5 V
1 VG2S = 4 V
f = 900 MHz
0
10
20
50
100
Gate Resistance R G (k Ω )
Power Gain vs. Drain Current
30
25
20
15
10 VDS = VG1 = 5 V
VG2S = 4 V
5
RG = variable
f = 900 MHz
0
0
5
10
15
20
Drain Current I D (mA)
Noise Figure vs. Drain Current
4
3
2
1
VDS = VG1 = 5 V
VG2S = 4 V
RG = variable
f = 900 MHz
0
0
5
10
15
20
Drain Current I D (mA)
7
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