BAV70T Просмотр технического описания (PDF) - Transys Electronics Limited
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BAV70T Datasheet PDF : 2 Pages
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Transys
Electronics
LIMITED
SOT-523 Plastic-Encapsulated Diodes
BAS16T/BAW56T/BAV70T/BAV99T
SWITCHING DIODE
FEATURES
Power dissipation
PD:
150 mW (Tamb=25℃)
Forward Current
IF:
Reverse Voltage
75 m A
VR:
85 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
SOT-523
BAS16T Marking: A2 BAW56T Marking: JD
BAV70T Marking: JJ
BAV99T Marking: JE
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Symbol
V(BR)
IR1
IR2
VF
CD
t rr
Test conditions
IR= 100µA
VR=75V
VR=25V
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=0V, f=1MHz
MIN
MAX
85
2
0.03
715
855
1000
1250
1.5
4
UNIT
V
µA
µA
mV
pF
nS
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