NXP Semiconductors
Schottky barrier (double) diodes
Product data sheet
BAT754 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VR
IF
IFRM
IFSM
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
Tstg
Tj
Tamb
storage temperature
junction temperature
operating ambient temperature
tp ≤ 1 s; δ ≤ 0.5
t = 8.3 ms half sinewave;
JEDEC method
MIN. MAX. UNIT
−
30
V
−
200 mA
−
300 mA
−
600 mA
−65 +150 °C
−
125 °C
−65 +125 °C
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF
forward voltage
IR
reverse current
Cd
diode capacitance
Note
1. Pulse test: tp = 300 μs; δ ≤ 0.02.
CONDITIONS
TYP. MAX. UNIT
see Fig.6
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 30 mA
IF = 100 mA
−
200 mV
−
260 mV
−
340 mV
−
420 mV
600 −
mV
VR = 25 V; note 1; see Fig.7
−
f = 1 MHz; VR = 1 V; see Fig.8 −
2
μA
10
pF
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
Note
1. Refer to SOT23 standard mounting conditions.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
2003 Mar 25
3