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BAT754 Просмотр технического описания (PDF) - NXP Semiconductors.

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Компоненты Описание
производитель
BAT754
NXP
NXP Semiconductors. NXP
BAT754 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
NXP Semiconductors
Schottky barrier (double) diodes
Product data sheet
BAT754 series
FEATURES
Very low forward voltage
Guard ring protected
Small plastic SMD package
Low diode capacitance.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes
Low power consumption
applications, e.g. hand-held
applications.
PINNING
BAT754
PIN
A
C
S
1
a
k1
a1
a1
2
n.c. k2
a2
k2
3
k a1, a2 k1, k2 k1, a2
handbook, 2 columns
3
1
2
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT23 small
plastic SMD package. Low forward
voltage selection of the BAT54 series.
Single diodes and double diodes with
different pinning are available.
Top view
MGC421
Fig.1 Simplified outline
(SOT23) and pin
configuration.
MARKING
TYPE NUMBER
BAT754
BAT754A
BAT754C
BAT754S
MARKING
CODE(1)
2K*
2L*
2M*
2N*
Note
1. = p : Made in Hong Kong.
= t : Made in Malaysia.
= W : Made in China.
3
1
2
n.c.
MLC357
Fig.2 BAT754 single diode
configuration (symbol).
3
1
2
MLC360
Fig.3 BAT754A diode
configuration (symbol).
3
1
2
MLC359
Fig.4 BAT754C diode
configuration (symbol).
3
1
2
MLC358
Fig.5 BAT754S diode
configuration (symbol).
2003 Mar 25
2

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