BAS21 Просмотр технического описания (PDF) - Willas Electronic Corp.
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BAS21 Datasheet PDF : 3 Pages
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WILLAS
S1O.0ATS-2UR3FAPClEaMsOtUicNT-ESCnHcOaTTpKsYuBAlaRtReIERDRiEoCdTIeFIsERS -20V- 200V
FM120-M+
BAS21xTHRU
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Typical CharactPearciksatgiecosutline
• Batch proceFsosrdweasrigdn, eCxcheallreancttpeorwisetricdsissipation offers
1000better reverse leakage current and thermal resistance.
1000
Reverse Characteristics
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
1•0L0 ow power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
100
0.146(3.7)
0.130(3.3)
Ta=100 oC
0.012(0.3) Typ.
•1G0 uardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
0.071(1.8)
0.056(1.4)
• L1 ead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
0.H1 alogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
0•.0C10.a0se : Mol0d.e4 d plastic0.,8SOD-1213.2H
1.6
2.0
•
Terminals
:PFlOatReWd AteRrDmiVnOaLlsT,AsGoElderVaFble(Vp)er
,
MIL-STD-750
Method 2026
10
Ta=25 oC
0.040(1.0)
0.024(0.6)
1
0 0.031(0.84) 0Typ.
80
120
160 0.031(0.8) T2y0p0.
REVERSE VOLTAGE V (V)
R
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : ACpapproaxcimitaatnecde0.C0h11agraracmteristics
Power Derating Curve
1.6
300
MAXIMUM RATINGS AND ELECTaT=2R5℃ICAL CHARACTERISTICS
f=1MHz
Ratings at 25℃ ambient temperature unless otherwise specified.
250
Single p1h.4ase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
1.2
RATINGS
200
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Marking Code
Maximum Recurrent Peak Reverse Voltage
12
13
14
15
16
VRRM
20
30 150 40
50
60
18
10
115 120
80
100
150
200 Vo
Maximum1.0RMS Voltage
Maximum DC Blocking Voltage
VRMS
14
21
28
35
42
VDC
20
30 100 40
50
60
56
70
105
140 Vo
80
100
150
200 Vo
Maximum0.8Average Forward Rectified Current
IO
1.0
Am
50
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
superimposed on rated load (JEDEC method)
0.6
Typical The0rmal Resista4nce (Note 28)
12
R16ΘJA
20
30
Am
0
0
25
50 40 75
100
125
150
℃/
Typical Junction CapacitaRnEcVe E(NRoSteE1V)OLTAGE V (V)CJ
R
Operating Temperature Range
TJ
-55 to +125
AMBIENT TEM1P20ERATURE T (℃)
a
-55 to +150
P
℃
Storage Temperature Range
TSTG
- 65 to +175
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VF
0.50
0.70
0.85
0.9
0.92 Vo
IR
0.5
mA
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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