ES3J Просмотр технического описания (PDF) - Fairchild Semiconductor
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ES3J Datasheet PDF : 5 Pages
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Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
PD
RJA
Power Dissipation
Thermal Resistance,
Junction to Ambient(1)
Maximum Land Pattern: 16 x 16 mm
Minimum Land Pattern: 2.6 x 3.2 mm
RJL
Thermal Resistance,
Junction to Lead(1)
Maximum Land Pattern: 16 x 16 mm
Minimum Land Pattern: 2.6 x 3.2 mm
Note:
1. Device mounted on FR-4 PCB 0.013 mm.
Value
1.66
47
125
12
16
Unit
W
C/W
C/W
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
VF Maximum Forward Voltage IF = 3.0 A
trr Reverse Recovery Time
IF = 0.5 A,
IR = 1.0 A,
IRR = 0.25 A
Typ.
Max.
IR
Maximum Reverse Current TA = 25C
at Rated VR
TA = 100C
CT Total Capacitance
VR = 4.0 V, f = 1.0 MHz
Value
ES3A ES3B ES3C ES3D ES3J
0.95
1.70
20
35
30
45
10
500
45
Unit
V
ns
A
pF
© 1999 Fairchild Semiconductor Corporation
ES3A - ES3J Rev. 2.11
2
www.fairchildsemi.com
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