BAS16X Просмотр технического описания (PDF) - Willas Electronic Corp.

Номер в каталоге

Компоненты Описание

производитель

BAS16X

SOD-523 Plastic-Encapsulate Diodes

Willas Electronic Corp. 

WILLAS

SO1.0DA S-5UR2F3ACPElMaOsUtNiTcS-ECHnOcTTaKpYsBuARlaRItEeR

Diodes

RECTIFIERS

-20V-

200V

SOD-123+ PACKAGE

FM120-M+

BAS16XTHRU

FM1200-M+

Pb Free Product

Features

Package outline

• Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

• Low profile surface mounted application in order to

SOD-123H

Typical Characteristics optimize board space.

• Low power loss, high efficiency.

0.146(3.7)

0.130(3.3)

• High current capability, low forward voltage drop.

•15H0 igh surge capFaobriwlitayr.d Characteristics

•10G0 uardring for overvoltage protection.

Reverse Characteristics

1000

• Ultra high-speed switching.

• Silicon epitaxial planar chip, metal silicon junction.

Ta=100℃

• Lead-free parts meet environmental standards of

1M0 IL-STD-19500 /228

• RoHS product for packing code suffix "G"

100

Halogen free product for packing code suffix "H"

M1echanical data

• Epoxy : UL94-V0 rated flame retardant

• Case : Molded plastic, SOD-123H

,

•0.T1erminals :Plated terminals, solderable per MIL-STD-750

10

0.031(0.8) Typ.

Ta=25℃

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

0.040(1.0)

0.024(0.6)

0.031(0.8) Typ.

Method 2026

• Polarity : Indicated by cathode band

Dimensions in inches and (millimeters)

•0.0M1 ounting Position : Any

0.0

0.2

0.4

0.6

0.8

1.0

1.2

• Weight : ApproxFOimRWatAeRdD0V.O0L1T1AGgEramVF (V)

1

0

20

40

60

80

REVERSE VOLTAGE VR (V)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase half wave, 60Hz, resistive of inductive load.

For capacitive load, deraCtaepcaucrirtaennct ebyC2h0a%racteristics

1.2

Power Derating Curve

200

RATINGS

SYMBOTaL=2F5M℃120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN

Marking Code

f=1MHz 12

13

14

15

16

18

10

115 120

Maximum Recurrent Peak Reverse Voltage

VRRM

20

30

40

50

60

80

100

150

200 Vo

Maximum RMS Voltage

VRMS

14

21 150 28

35

42

56

70

105

140 Vo

Maximum DC Blocking Voltage

VDC

20

30

40

50

60

80

100

150

200 Vo

Maximum Average Forward Rectified Current

IO

1.0

Am

1.0

100

Peak Forward Surge Current 8.3 ms single half sine-wave IFSM

30

Am

superimposed on rated load (JEDEC method)

Typical Thermal Resistance (Note 2)

RΘJA

40

℃

Typical Junction Capacitance (Note 1)

CJ

50

120

P

Operating Temperature Range

TJ

-55 to +125

-55 to +150

℃

Storage Temperature Range

TSTG

- 65 to +175

℃

0.8

0

CHAR5ACTERISTICS10

0

1S5 YMBOL FM12200-MH FM130-MH FM0140-MH F2M5 150-MH F50M160-MH 7F5M180-MH10F0M1100-M12H5 FM11501-5M0 H FM1200-MH UN

Maximum Forward Voltage aRt E1V.0EARSDECVOLTAGE VR (V) VF

0.50

AM0B.7IE0NT TEMPERATURE 0.T8a5 (℃)

0.9

0.92 Vo

Maximum Average Reverse Current at @T A=25℃

IR

Rated DC Blocking Voltage

@T A=125℃

0.5

mA

10

NOTES:

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

2- Thermal Resistance From Junction to Ambient

2012-06

2012-1

WILLAS ELECTRONIC CORP.

WILLAS ELECTRONIC CORP.

Share Link: