BAS16V Просмотр технического описания (PDF) - Willas Electronic Corp.

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BAS16V

SOT-563 Plastic-Encapsulate Diodes

Willas Electronic Corp. 

WILLAS

SOT-563 Plastic-Encapsulate Diodes

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

SOD-123+ PACKAGE

FM120-M+

BAS16TVHRU

FM1200-M+

Pb Free Product

Features

• Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

SWITC•HLINowGprDoIfiOleDsuErface mounted application in order to

optimize board space.

FEATU•RLEowSpower loss, high efficiency.

z F•asHtigShwcuitrcrehnint cgaSpapbeileityd, low forward voltage drop.

z F•orHiGghesnuerrgaelcPapuarpbiolistye. Switching Applications

• Guardring for overvoltage protection.

z H•igUhltrCa ohnigdhu-scpteaendcsewitching.

z P•bS-Filriceoen eppaitcakxaiagl pelainsaar cvhaipil,ambeletal silicon junction.

R•oLHMeISaLd-pS-frTroeDde-1up9ca5trt0fs0omr/2ep2ea8t ceknivnirgoncmoednetasl ustfafinxd”aGrd”s of

H•aRloogHeSnprfordeuectpforropdaucckitngfocrodpeascukffiinxg"Gc"ode suffix “H”

z

Halogen free product for packing code suffix "H"

MMoisetcurheaSneincsaitilvdityaLtaevel 1

• Epoxy : UL94-V0 rated flame retardant

Markin•gC:aKseA:MMolded plastic, SOD-123H

,

• Terminals :Plated terminals, solderable per MIL-STD-750

Package outline

SOD-123H

SOT-563

0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

6 51 4

0.031(0.8) Typ.

0.040(1.0)

0.024(0.6)

1 23

0.031(0.8) Typ.

Method 2026

Maxim•uPmolaRriatyti:nIngdsic@ateTdab=y2c5a℃thode band

Dimensions in inches and (millimeters)

• MountingPParoasmitieotne:rAny

Symbol

Limit

Unit

• Weight : Approximated 0.011 gram

Non-Repetitive Peak Reverse Voltage

VRM

100

V

Peak RepetitivMeAPXeIaMkURMeveRrAseTIVNoGltaSgAeND ELECVTRRRMICAL CHARACTERISTICS

WRaotirnkgisngat P25e℃ak aRmebvienrst teemVopeltraagtuere unless otherwise sVpReWcMified.

75

V

DSiCngBlelophcaksineghaVlfowltaavgee, 60Hz, resistive of inductive load. VR

RFoMr ScaRpaecviteivreseloaVdo,ldtaegraete current by 20%

VR(RMS)

53

V

Forward ContinuouRsATCINuGrrSent

Marking Code

MAavxeimraugmeRReceucrrteifnitePdeaOkuRtepvuetrsCe uVrorlteanget

SYMBOIFLMFM120-MH FM130-MH FM13400-0MH FM150-MH FM160-MH FM180-MH FMm11A00-MH FM1150-MH FM1200-MH UN

12

13

14

15

16

18

10

115 120

VRRMIO 20

30

42000 50

60

80

m10A0

150

200 Vol

MPaexaimkuFmoRrwMSarVdolStaugrege Current @t=1.0μs

VRMS

14

21

228.0 35

42

Maximum DC Blocking Voltage

IFSM

@t =1.0s

VDC

20

30

410.0 50

60

56

70

105

140 Volt

A

80

100

150

200 Volt

MPaoxwimeurmDAivsesraipgaetFioornward Rectified Current

IO PD

150

1.0

mW

Am

PTehaek rFmorwaal rRd eSusrigsetaCnurcreentJ8u.3nmcstisoinnglteohaAlfmsinbei-ewnavte IFSMRθJA

833

30

K/W

Am

sJuupenrcimtpioosnedToenmrapteedrlaotaudr(eJEDEC method)

TSytpoicraalgTeheTrmeaml Rpeesriasttaunrcee (Note 2)

Typical Junction Capacitance (Note 1)

Tj

RΘJA

CJ

TSTG

150

℃

-55~+150

40

120

℃

℃/W

PF

EOLpEerCatiTngRTIeCmApeLratCurHe RAaRngAe CTERISTICS

Storage Temperature Range

(Ta=T2ST5TJ℃G

unless

-55 to +125

otherwise

specified)

- 65 to +175

-55 to +150

℃

℃

ParaCmHAeRteArCTERISTICS

SYSMyBmOLboFMl 120-MH FTMe1s3t0-MHcFoMn1d4i0t-ioMnHsFM150-MH FM160M-MiHn FM180-MMH aFxM1100-MH FMU11n5i0t-MH FM1200-MH UNI

Maximum Forward Voltage at 1.0A DC

VF

0.50

0.70

0.85

0.9

0.92 Vol

MaRxeimvuemrsAevebrraegeakRdeovewrsne vCourlrteangt eat @T A=25℃

Rated DC Blocking Voltage

@T A=125℃

IVR (BR)

NORTeESv:erse voltage leakage current

IR

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

2- Thermal Resistance From Junction to Ambient

Forward voltage

VF

IR= 100µA

VR=75V

VR=20V

IF=1mA

IF=10mA

IF=50mA

07.55

V

mAm

10

1

µA

25

nA

0.715

0.855

V

1

IF=150mA

1.25

Diode capacitance

CD

VR=0, f=1MHz

2

pF

Reveres recovery time

2012-06

2012-1

IF=IR=10mA,Irr=0.1×IR,

trr

RL=100Ω

4

ns

WILLAS ELECTRONIC CORP.

WILLAS ELECTRONIC CORP.

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