BAS16X Просмотр технического описания (PDF) - Galaxy Semi-Conductor

Номер в каталоге

Компоненты Описание

производитель

BAS16X

High speed Switching Diod

Galaxy Semi-Conductor 

High speed Switching Diode

Production specification

BAS16X

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Min.

Reverse breakdown voltage V(BR)R 85

Forward voltage

VF

Reverse current

IR

Diode capacitance

Cd

Reverse recovery time

trr

Typ. Max. Unit

V

0.715

0.815

V

1

1.25

2.0 μA

30 nA

1.5 pF

4

ns

Conditions

IR=100μA

IF=1mA

IF=10mA

IF=50mA

IF=150mA

VR=75V

VR=25V

VR=0V,f=1MHz

IF=IR=10mA,RL=100Ω

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

H008

Rev.A

www.gmesemi.com

2

Share Link: