BAS16V-7 Просмотр технического описания (PDF) - Diodes Incorporated.
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BAS16V-7 Datasheet PDF : 5 Pages
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BAS16V
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
VRM
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
75
V
VR
RMS Reverse Voltage
VR(RMS)
53
V
Forward Continuous Current
(Note 6)
IFM
300
mA
Average Rectified Output Current
(Note 6)
IO
Non-Repetitive Peak Forward Surge Current
@ t = 1.0µs
@ t = 1.0s
IFSM
200
mA
2.0
1.0
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance Junction to Ambient Air
Operating and Storage Temperature Range
(Note 6)
(Note 6)
Symbol
Pd
RθJA
Tj , TSTG
Value
150
833
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage (Note 7)
Forward Voltage
Leakage Current (Note 7)
Total Capacitance
Reverse Recovery Time
Symbol Min
V(BR)R
75
VF
IR
CT
trr
Max
0.715
0.855
1.0
1.25
1.0
50
30
25
2.0
4.0
Unit
V
V
µA
µA
A
nA
pF
ns
Test Condition
IR = 100µA
IF = 1.0mA
IF = 10mA
IF = 50mA
IF = 150mA
VR = 75V
VR = 75V, Tj = +150°C
VR = 25V, Tj = +150°C
VR = 20V
VR = 0, f = 1.0MHz
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100Ω
Notes:
6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
7. Short duration pulse test used to minimize self-heating effect.
BAS16V
Document number: DS30447 Rev. 8 - 2
2 of 5
www.diodes.com
April 2015
© Diodes Incorporated
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