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BAS170 Просмотр технического описания (PDF) - Siemens AG
Номер в каталоге
Компоненты Описание
производитель
BAS170
Silicon Schottky Diode
Siemens AG
BAS170 Datasheet PDF : 4 Pages
1
2
3
4
Electrical Characteristics
at
T
A
= 25
°
C, unless otherwise specified.
Parameter
DC Characteristics
Breakdown voltage
I
(BR)
= 10
µ
A
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 15 mA
Reverse current
V
R
= 50 V
V
R
= 70 V
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
Charge carrier life time
I
F
= 25 mA
Differential forward resistance
I
F
= 10 mA,
f
= 10 kHz
Series inductance
BAS 170W
Symbol
min.
Value
Unit
typ. max.
V
(BR)
V
F
I
R
C
T
I
R
F
L
S
V
70
-
-
mV
300 375 410
600 705 750
750 880 1000
µ
A
-
-
0.1
-
-
10
pF
-
1.5 2
ps
-
-
100
Ω
-
34
-
nH
-
2
-
Semiconductor Group
2
Edition A01, 11.07.94
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