BAP64Q Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
производитель
BAP64Q Datasheet PDF : 13 Pages
| |||
NXP Semiconductors
BAP64Q
Quad PIN diode attenuator
7. Characteristics
Table 6. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VF
forward voltage
IF = 50 mA
IR
reverse current
VR = 20 V
VR = 100 V
Cd
diode capacitance
f = 1 MHz; see Figure 1
VR = 0 V
VR = 1 V
VR = 20 V
rD
diode forward resistance f = 100 MHz; see Figure 2
IF = 0.5 mA
IF = 1 mA
IF = 10 mA
IF = 100 mA
τL
charge carrier life time when switched from
IF = 10 mA to IR = 6 mA;
RL = 100 Ω;
measured at IR = 3 mA
[1] Guaranteed on AQL basis: inspection level S4, AQL 1.0.
Min Typ Max Unit
- 0.95 1.1 V
--
1 μA
--
10 μA
- 0.52 - pF
- 0.37 - pF
- 0.23 0.35 pF
[1] -
[1] -
[1] -
[1] -
-
20 40 Ω
10 20 Ω
2
3.8 Ω
0.7 1.35 Ω
1.55 - μs
001aam721
500
Cd
(fF)
400
300
200
100
0
0
4
8
12
16
20
VR (V)
Fig 1.
f = 1 MHz; Tj = 25 °C.
Diode capacitance as a function of reverse
voltage; typical values.
102
rD
(Ω)
10
001aam722
1
10−110−1
1
10
102
IF (mA)
Fig 2.
f = 100 MHz; Tj = 25 °C.
Diode forward resistance as a function of
forward current; typical values.
BAP64Q
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 7 October 2010
© NXP B.V. 2010. All rights reserved.
3 of 13
Share Link: 