BA892H6770 Просмотр технического описания (PDF) - Infineon Technologies

Номер в каталоге

Компоненты Описание

производитель

BA892H6770

Silicon RF Switching Diode

Infineon Technologies 

Silicon RF Switching Diode

• For band switching in TV/VTR tuners

and mobile applications

• Very low forward resistance (typ. 0.45 Ω @ 3 mA)

• Small capacitance

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

BA592/BA892...

BA592

BA892/-02L

BA892-02V



Type

BA592

BA892

BA892-02L

BA892-02V

Package

SOD323

SCD80

TSLP-2-1

SC79

Configuration

single

single

single, leadless

single

Maximum Ratings at TA = 25°C, unless otherwise specified

Parameter

Symbol

Diode reverse voltage

VR

Forward current

IF

Junction temperature

TJ

Operating temperature range

Top

Storage temperature

TStg

LS(nH)

1.8

0.6

0.4

0.6

Marking

blue S

AA

AA

A

Value

Unit

35

V

100

mA

150

°C

-55 ... 125

-55 ... 150

1

2011-07-21

Share Link: