BA4510FVM-TR Просмотр технического описания (PDF) - ROHM Semiconductor

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производитель

BA4510FVM-TR

Low Noise Operational Amplifiers

ROHM Semiconductor 

BA4558F,BA4558R F/FV/FVM,BA4560F,BA4560RF/FV/FVM,BA4564RFVBA4580RF/FVM,BA4584FV,

BA4584RF/FV,BA8522RF/FV/FVM,BA15218F,BA14741F,BA15532F,BA4510F/FV,BA2115F/FVM

Technical Note

●Electrical characteristics

○BA8522R family (Unless otherwise specified VCC=+15[V], VEE=-15[V], Ta=25[℃])

Limits

Parameter

Symbol

Temperature

Range

BA8522R F/FV/FVM

Unit

Min. Typ. Max.

Input Offset Voltage (*20)

Vio

25℃

-

0.1 1.5 mV

Condition

Input Offset Voltage drift (*20)

Vio/ΔT

-

2

- μV/℃

Input Offset Current (*20)

Iio

25℃

-

5

200 nA

Input Bias Current (*21)

Supply Current

Maximum Output Voltage

Large Signal Voltage Gain

Ib

ICC

VOM

AV

25℃

25℃

25℃

25℃

-

50 500 nA

-

5.5

9

mA

RL=∞ All Op-Amps

VIN+=0[V]

±12 ±13.5

±10.5 ±11

-

V RL≧10[kΩ]

V RL≧2[kΩ]

86 110

-

dB RL≧10[kΩ], VOUT=±10[V]

Input Common-mode Voltage Range Vicm

25℃ ±12 ±14

-

V

Common-mode Rejection Ratio

CMRR

25℃

70

90

-

dB

Power Supply Rejection Ratio

PSRR

25℃ 76.5 90

-

dB

Channel Separation

CS

25℃

-

105

-

dB

Slew Rate

SR

25℃

-

3

- V/μs

Unity Gain Frequency

ft

25℃

-

6

- MHz

Input Referred Noise Voltage

Vni

25℃

-

1.2

- μVrms

Total Harmonic Distortion

THD

25℃

- 0.002 -

%

(*20) Absolute value

(*21) Current direction: Since first input stage is composed with PNP transistor, input bias current flows out of IC.

Av=20[dB], VOUT=5[Vrms]

f=1[kHz]

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9/48

2011.08 - Rev.B

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