BA282-TAP Просмотр технического описания (PDF) - Vishay Semiconductors
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BA282-TAP Datasheet PDF : 4 Pages
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BA282/BA283
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part Symbol Min.
Typ.
Max.
Unit
Forward voltage
IF = 100 mA
VF
1000
mV
Reverse current
VR = 20 V
IR
50
nA
f = 100 MHz, VR = 1 V
CD
1.7
pF
Diode capacitance
f = 100 MHz, VR = 3 V
BA282
CD
1.5
pF
BA283
CD
1.2
pF
f = 200 MHz, IF = 3 mA
BA282
rf
1.0
Ω
Differential forward resistance
BA283
rf
f = 200 MHz, IF = 10 mA
BA282
rf
1.2
Ω
0.7
Ω
BA283
rf
0.9
Ω
Reverse impedance
f = 100 MHz, VR = 1 V
zr
100
kΩ
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
100
f = 200 MHz
Tj = 25 °C
10
BA283
1
BA282
0.1
0.1
1
10
100
94 9072
IF - Forward Current (mA)
Figure 1. Differential Forward Resistance vs. Forward Current
3.0
2.5
f = 200 MHz
Tj = 25 °C
2.0
1.5
1.0
BA283
0.5
BA282
0
0.1
1
10
100
94 9073
VR - Reverse Voltage (V)
Figure 2. Diode Capacitance vs. Reverse Voltage
Package Dimensions in millimeters (inches): DO35
Cathode Identification
26 min. (1.024)
3.9 max. (0.154)
26 min. (1.024)
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
www.vishay.com
2
For technical support, please contact: Diodes-SSP@vishay.com
Document Number 85526
Rev. 1.7, 05-Dec-07
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