IRFD9120 Просмотр технического описания (PDF) - Intersil

Номер в каталоге

Компоненты Описание

производитель

IRFD9120

1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET

Intersil 

IRFD9120

Typical Performance Curves Unless Otherwise Specified (Continued)

-5

-4

VGS = -8V

VGS = -9V

-3

VGS = -10V

VGS = -6V

VGS = -7V

-2

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX.

VGS = -5V

-1

VGS = -4V

0

0

-1

-2

-3

-4

-5

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 5. SATURATION CHARACTERISTICS

1.6

1.2

-5

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX.

-4 VDS ≥ I D(ON) x rDS(ON) MAX.

TJ = -55oC

TJ = 25oC

-3

-2

TJ = 125oC

-1

0

-2

-3

-4

-5

-6

-7

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 6. TRANSFER CHARACTERISTICS

2.2

VGS = -10V, ID = -8A

PULSE DURATION = 80µs

1.8 DUTY CYCLE = 0.5% MAX.

0.8

VGS = -10V

0.4

VGS = -20V

0

0

-2

-4

-6

-8

ID, DRAIN CURRENT (A)

NOTE: Heating effect of 2µs pulse is minimal.

FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

1.4

1.0

0.6

0.2

-40

0

40

80

120

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 8. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

1.25

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX.

1.15

1.05

0.95

0.85

0.75

-40

0

40

80

120

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

500

400

CISS

300

200

COSS

100

CRSS

VGS = 0V, f = 1MHz

CISS = CGS + CGD

CRSS = CGD

COSS ≈ CDS + CGD

00

-10

-20

-30

-40

-50

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

4-48

Share Link: