IRFD9120 Просмотр технического описания (PDF) - Intersil

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производитель

IRFD9120

1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET

Intersil 

IRFD9120

Source to Drain Diode Specifications

PARAMETER

Continuous Source to Drain Current

Pulse Source to Drain Current

(Note 3)

SYMBOL

ISD

ISDM

TEST CONDITIONS

Modified MOSFET Symbol

Showing the Integral

Reverse P-N Junction

Diode

G

MIN TYP MAX UNITS

-

-

-1.0

A

D

-

-

-8.0

A

S

Source to Drain Diode Voltage (Note 2)

Reverse Recovery Time

Reverse Recovery Charge

VSD

trr

QRR

TC = 25oC, ISD = -1.0A, VGS = 0V, (Figure 12)

TJ = 150oC, ISD = -4.0A, dISD/dt = 100A/µs

TJ = 150oC, ISD = -4.0A, dISD/dt = 100A/µs

NOTES:

2. Pulse test: pulse width ≤ 80µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

4. VDD = 25V, starting TJ = 25oC, L = 555mH, RG = 25Ω, Peak IAS= 1.0A (Figures 14, 15).

Typical Performance Curves Unless Otherwise Specified

-

-

-1.5

V

-

150

-

ns

-

0.9

-

µC

1.2

1.0

0.8

0.6

0.4

0.2

0

0

25

50

75

100

125

150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT

TEMPERATURE

-1.0

-0.8

-0.6

-0.4

-0.2

0

25

50

75

100

125

150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

10

10µs

100µs

1

1ms

10ms

0.1 OPERATION IN THIS AREA

IS LIMITED BY rDS(ON)

100ms

TC = 25oC

0.01 TJ = MAX RATED

DC

SINGLE PULSE

1

10

100

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA

-5

VGS = -7V

-4

VGS = -10V

-3

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX.

VGS = -6V

-2

VGS = -5V

-1

VGS = -4V

0

0

-10

-20

-30

-40

-50

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. OUTPUT CHARACTERISTICS

4-47

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