IRFD9120 Просмотр технического описания (PDF) - Intersil
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IRFD9120 Datasheet PDF : 6 Pages
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IRFD9120
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFD9120
-100
-100
-1.0
-8.0
±20
1.0
0.008
370
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
BVDSS ID = -250µA, VGS = 0V, (Figure 9)
-100 -
-
V
VGS(TH) VGS = VDS, ID = -250µA
-2
-
-4
V
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
-
-
-25
µA
- -250 µA
ID(ON) VDS > ID(ON) x rDS(ON) MAX, VGS = -10V
-1.0 -
-
A
IGSS VGS = ±20V
-
- ±500 nA
rDS(ON) ID = -0.8A, VGS = -10V, (Figures 7, 8)
- 0.5 0.6
Ω
gfs
VDS < 50V, ID = -0.8A (Figure 11)
0.8 1.2
-
S
td(ON) VDD = 0.5 x Rated BVDSS, ID = -1.0A,
-
25 50
ns
tr
RG = 9.1Ω, VGS = -10V, (Figures 16, 17)
RL = 50Ω for VDD = -50V
-
50 100
ns
td(OFF) MOSFET Switching Times are Essentially Indepen-
-
50 100
ns
tf
dent of Operating Temperature
-
50 100
ns
Qg(TOT) VGS = -10V, ID = -1.0A, VDS = 0.8 x Rated BVDSS
-
16 20
nC
(Figures 13, 18, 19)
Qgs
Gate Charge is Essentially Independent of Operating -
Temperature
9
-
nC
Qgd
-
7
-
nC
CISS VDS = -25V, VGS = 0V, f = 1MHz, (Figure 10)
- 300 -
pF
COSS
- 200 -
pF
CRSS
-
50
-
pF
LD
Measured From the Drain Modified MOSFET
-
4.0
-
nH
Lead, 2.0mm (0.08in) From Symbol Showing the In-
Header to Center of Die ternal Devices
LS
Measured From the Source Inductances
Lead, 2.0mm (0.08in) From
D
-
6.0
-
nH
Header to Source Bonding
LD
Pad
G
LS
Thermal Resistance Junction to Ambient
RθJA Typical Socket Mount
S
-
-
120 oC/W
4-46
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