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TC820CPL Просмотр технического описания (PDF) - TelCom Semiconductor Inc => Microchip

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Компоненты Описание
производитель
TC820CPL
TelCom-Semiconductor
TelCom Semiconductor Inc => Microchip TelCom-Semiconductor
TC820CPL Datasheet PDF : 22 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
3-3/4 DIGIT A/D CONVERTER WITH
FREQUENCY AND LOGIC PROBE
1
TC820
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage (VDD to GND) .....................................15V
Analog Input Voltage (Either Input) (Note 1) .... VDD to VSS
Reference Input Voltage (Either Input) ............. VDD to VSS
Digital Inputs ............................................... VDD to DGND
VDISP ............................................. VDD to (DGND – 0.3V)
Package Power Dissipation (TA 70°C) (Note 2)
40-Pin Plastic DIP ............................................. 1.23W
44-Pin PLCC .....................................................1.23W
44-Pin Plastic Flat Package .............................. 1.00W
Operating Temperature Range
"C" Devices ............................................ 0°C to +70°C
"E" Devices ....................................... – 40°C to +85°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................... 300°C
*Static-sensitive devices. Unused devices should be stored in conductive
material to protect against static discharge and static fields. Stresses above
those listed under Absolute Maximum Ratings may cause permanent
damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
2
NOTES: 1. Input voltages may exceed the supply voltages provided that
input current is limited to ±100µA. Current above this value
may result in invalid display readings but will not destroy the
device if limited to ±1mA.
2. Dissipation ratings assume device is mounted with all leads
soldered to printed circuit board.
3
ELECTRICAL CHARACTERISTICS: VS = 9V, TA = 25°C, unless otherwise specified.
Symbol Parameter
Test Conditions
Min
Typ
RE
NL
CMRR
VCMR
eN
IIN
Zero Input Reading
Roll-Over Error
Nonlinearity (Maximum
Deviation From Best
Straight Line Fit)
Ratiometric Reading
Common-Mode Rejection
Ratio
Common-Mode Voltage
Range
Noise (P-P Value Not
Exceeded 95% of Time)
Input Leakage Current
VCOM
VCTC
TCZS
TCFS
Analog Common Voltage
Common Voltage
Temperature Coefficient
Zero Reading Drift
Scale Factor
Temperature Coefficient
IS
Supply Current
Peak-to-Peak Backplane
Drive Voltage
VIN = 0V
Full Scale = 400 mV
VIN = ±390mV
Full-Scale = 400mV
Full-Scale = 400mV
– 000
–1
–1
±000
±0.2
±0.2
VIN = VREF, TC820
VCM = ±1V, VIN = 0V
Full-Scale = 400mV
(VFS = 200 mV)
Input High, Input Low
VIN = 0V
Full-Scale = 400mV
VIN = 0V
TA = 25°C
0°C TA +70°C
– 40°C TA +85°C
25 kBetween Common and VDD
(VSS – VCOM)
25 kBetween Common and VDD
0°C TA +70°C
– 40°C TA +85°C
VIN = 0V
0°C TA +70°C
– 40°C TA +85°C
VIN = 399mV
0°C TA +70°C
– 40°C TA +85°C
Ext Ref = 0 ppm/°C
VIN = 0V
VS = 9V
VDISP = DGND
1999 1999/2000
50
VSS + 1.5
15
1
20
100
3.15
3.3
35
50
0.2
1
1
5
1
4.25
4.7
Max
+000
+1
+1
2000
VDD– 1
10
3.45
50
5
1.5
5.3
Units
Digital
Reading
Counts
Count
Digital
µV/V
V
µV
pA
V
ppm/°C
µV/°C
ppm/°C
mA
V
4
5
6
7
8
TELCOM SEMICONDUCTOR, INC.
3-151

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