AWT6123 Просмотр технического описания (PDF) - ANADIGICS
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AWT6123 Datasheet PDF : 10 Pages
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AWT6123
Table 4: Electrical Characteristics for GSM850/900
Unless otherwise specified:VCC = 3.5V, PIN = 5.5dBm, VREG_GSM = 2.8V, VAPC_GSM = 2.2V, ZIN = ZOUT = 50Ω, TC = 25 °C
VREG_DCS/PCS = VAPC_DCS/PCS = 0V, Pulse Width =1154µs
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNIT
Operating Frequency
FIN
Input Power
PIN
GSM850 Band (824 to 849MHz)
Output Power
PMAX
Efficiency GSM850 Class 4
PAE
Efficiency GSM850 Class 5
PAE
Degraded Output Power
POUT = PMAX
POUT = 31.5dBm
VCC = 3.0V, VREG = 2.7V,
TC = 85°C, PIN = 3dBm
824
849 MHz
880
915 MHz
3
5.5
8 dBm
34.5 35
45 50
35
32.5
dBm
%
%
dBm
GSM900 Band (880 to 915MHz)
Output Power
PMAX
34.5 35
dBm
Efficiency GSM900 Class 4
PAE POUT = PMAX
50 55
%
Degraded Output Power
VCC = 3.0V, VREG = 2.7V,
TC = 85°C, PIN = 3dBm
32.5
dBm
All Bands
Isolation
VAPC = 0.45V, PIN = 8dBm
-35 -30 dBm
Cross Isolation
2*FIN at DCS/PCS_OUT
port, DCS/PCS PA = OFF
-20 dBm
Harmonics (2-14F)
VAPC = 0.45 to 2.2V
-12 -7 dBm
Stability
Ruggedness
RX Band Noise Power
All VAPC, All VCC, All VREG,
TC = -20 to 85°C,
VSWR = 8:1 All phases
All VAPC, All VCC, All VREG,
TC = -20 to 85°C, All phases
RBW=VBW=100kHz,
PIN = 3.0 to 8dBm,
FIN = 915MHz,
FOUT = FIN + 10 to 20MHz
RBW=VBW=100kHz,
PIN = 3.0 to 8dBm,
FIN = 849 or 915MHz,
FOUT = FIN + 20 to 45MHz
10:1
-36 dBm
ratio
-70 dBm
-82 dBm
Input Return Loss
POUT = 5dBm to PMAX
2.5:1
4
Advanced Product Information - Rev 0.7
02-2003
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