ATR7035 Просмотр технического описания (PDF) - Atmel Corporation
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ATR7035 Datasheet PDF : 3 Pages
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Features
• Frequency Range 5 GHz to 6 GHz
• POUT Maximum 28 dBm
• Gain Typically 19 dB
• VCC 3.0 V to 3.9 V
• Package: QFN16
• Current Consumption in Power Down Mode Typically ≤15 µA
Benefits
• Biasing Control Extends Battery Life Time
• Simple Input and Output Matching
• One Single Supply Voltage Required
5.8-GHz WDCT
Power Amplifier
Electrostatic sensitive device.
Observe precautions for handling.
ATR7035
Description
Summary
Process
The 5-GHz power amplifier is designed using Atmel’s Silicon-Germanium (SiGe) pro-
cess and provides excellent noise performance as well as good power-added
efficiency.
Circuitry
The PA consists of a 2-stage amplifier with a maximum output power of 28 dBm. The
output stages were realized using an open-collector structure. The IC features 50-Ω
input matching. Power-up/down and output level are controlled at bias control pin 6
(VCTL).
Figure 1. Block Diagram
VCC1
15
VCC2
13
ATR7035
RFIN
3
Matching
RFOUT
11
RFOUT
10
Preliminary
Bias control
6
VCTL
16
VCC_CTL
Rev. 4577DS–DECT–11/04
Note: This is a summary document. A complete document
is available under NDA. For more information, please con-
tact your local Atmel sales office.
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