AT89C51RC2(2002) Просмотр технического описания (PDF) - Atmel Corporation

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Компоненты Описание

производитель

AT89C51RC2
(Rev.:2002)

FLASH C51 Microcontrollers

Atmel Corporation 

AT89C51RB2 / RC2 & T89C51IC2 QualPack

3 Technology Information

3.1 Wafer Process Technology

Process Type (Name):

Base Material:

Wafer Thickness (final)

Wafer Diameter

Number Of Masks

Gate Oxide (Logic transistors)

Material

Thickness

Gate Oxide (EPROM cell)

Material

Thickness

Logic 0.35um with embedded FLASH (AT56800)

Epitaxied Silicon

475um

150mm

27

Silicon Dioxide

68 A

Silicon Dioxide

390 A

Polysilicon

Number of Layers

Thickness Poly 1

Thickness Poly 2

Metal

Number of Layers

Material:

Layer 1 Thickness

Layer 2 Thickness

Layer 3 Thickness

Passivation

Material

Thickness

2

1400A Amorphous

3200A

3

AlCu

5000A

5000A

8000A

Oxide HDP/ Oxynitride

21000A

Rev. 1 – 2002 June

4

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