AT89C51RC2(2002) Просмотр технического описания (PDF) - Atmel Corporation
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AT89C51RC2 Datasheet PDF : 23 Pages
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AT89C51RB2 / RC2 & T89C51IC2 QualPack
4.3.4 FLASH characteristics
4.3.4.1 Cell endurance
Purpose:
To evaluate the ability of memory cell to withstand high number of program/erase cycles without change of
electrical characteristics.
Test Parameters:
Measurements have been done on lot 0r5414 (MP044 reticle).
Test done on 2 cells in a byte :
- cell near byte select transistor, called bit0 (1st column)
- cell near Vss contact, called bit 7 (8th column).
Cycling is done for various programming voltages :
- write :
13.5V on BL / 15.6V on select - clear : 13.5V on sense / 15.6V on select
@5ms
14.5V on BL / 16.6V on select @5ms 14.5V on sense / 16.6V on select
15.5V on BL / 17.6V on select
15.5V on sense / 17.6V on select
16.5V on BL / 17.6V on select
16.5V on sense / 17.6V on select
MP044 0R5414 #01
Vsel=Vbl+2.1 Bit 0 (near byte sel)
0
-0.5
13.5V
-1
14.5V
15.5V
16.5V
-1.5
-2
-2.5
1
7
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1
10
100
1000
10000
100000
# cycles
MP044 0R5414 #01
Vsel=Vsen+2.1 Bit 0 (near byte sel)
13.5V
14.5V
15.5V
16.5V
10
100
1000
10000
100000
# cycles
0
-0.5
-1
-1.5
-2
-2.5
1
7
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1
MP044 0R5414 #01
Vsel=Vbl+2.1 Bit 7 (near Vss)
13.5V
14.5V
15.5V
16.5V
10
100
1000
10000
100000
# cycles
MP044 0R5414 #01
Vsel=Vsen+2.1 Bit 7 (near Vss)
13.5V
14.5V
15.5V
16.5V
10
100
1000
10000
100000
# cycles
Rev. 1 – 2002 June
14
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