AS8S512K32P-12L/XT Просмотр технического описания (PDF) - Austin Semiconductor
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AS8S512K32P-12L/XT Datasheet PDF : 14 Pages
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Austin Semiconductor, Inc.
SRAM
AS8S512K32
& AS8S512K32A
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(NOTE 5) (-55oC<TA < 125oC and -40oC to +85oC; VCC = 5V +10%)
DESCRIPTION
READ CYCLE
READ cycle time
Address access time
Chip select access time
Output hold from address change
Chip select to output in Low-Z
Chip select to output in High-Z
Output enable access time
Output enable to output in Low-Z
Output disable to output in High-Z
WRITE CYCLE
WRITE cycle time
Chip select to end of write
Address valid to end of write
Address setup time
Address hold from end of write
WRITE pulse width
WRITE pulse width
Data setup time
Data hold time
Write disable to output in Low-z
Write enable to output in High-Z
SYMBOL
-12
MIN MAX
-15
MIN MAX
-17
MIN MAX
-20
MIN MAX
-25
MIN MAX
-35
MIN MAX
-45
MIN MAX
-55
MIN MAX
UNITS
NOTES
tRC
12
15
17
20
25
35
45
55
ns
tAA
12
15
17
20
25
35
45
55 ns
tACS
12
15
17
20
25
35
45
55 ns
tOH
2
2
2
2
2
2
2
2
ns
tLZCS
2
2
2
2
2
2
2
2
ns
tHZCS
7
8
9
10
12
15
20
20 ns
tAOE
7
8
9
10
12
15
20
20 ns
tLZOE
0
0
0
0
0
0
0
0
ns
tHZOE
12
12
12
15
20
20 ns
4,6,7
4,6,7
4,6
4,6
tWC
12
15
17
20
25
35
45
55
ns
tCW
10
12
15
15
17
20
25
25
ns
tAW
10
12
15
15
17
20
25
25
ns
tAS
2
2
2
2
2
2
2
2
ns
tAH
1
1
1
1
1
1
1
1
ns
tWP1
10
12
15
15
17
20
25
25
ns
tWP2
10
12
15
15
17
20
25
25
ns
tDS
8
10
12
10
12
15
20
20
ns
tDH
0
0
0
0
0
0
0
0
ns
tLZWE
2
2
2
2
2
2
2
2
ns
4,6,7
tHZWE 7
8
9
11
13
15
15
15 ns
4,6,7
AS8S512K32 & AS8S512K32A
Rev. 6.0 6/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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